Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs

被引：0
|
作者：
机构：
来源：
Diamond Relat. Mat. | / 10卷 / 1536-1538期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs
    Alause, H
    Skierbiszewski, C
    Dyakonov, M
    Knap, W
    Sadowski, ML
    Huant, S
    Young, J
    Khan, MA
    Chen, Q
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1536 - 1538
  • [2] RF characterisation and transient behaviour of AlGaN/GaN power HFETs
    Leier, H
    Vescan, A
    Dietrich, R
    Wieszt, A
    Sledzik, HH
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (10) : 1442 - 1447
  • [3] Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs
    Uren, MJ
    Lee, D
    Hughes, BT
    Parmiter, PJM
    Birbeck, JC
    Balmer, R
    Martin, T
    Wallis, RH
    Jones, SK
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) : 579 - 583
  • [4] High temperature RF characterisation of SiN passivated and unpassivated AlGaN/GaN HFETs
    Harrison, I
    Clayton, NW
    Jeffs, NJ
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (01): : 275 - 278
  • [5] Bulk breakdown in AlGaN/GaN HFETs
    Gradinaru, G
    Kao, NC
    Gaska, R
    Yang, J
    Chen, Q
    Khan, MA
    Sudarshan, TS
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 309 - 314
  • [6] Modeling and limitations of AlGaN/GaN HFETs
    Trew, RJ
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 432 - 435
  • [7] AlGaN/GaN HFETs for automotive applications
    Birkhahn, R
    Gotthold, D
    Cauffman, N
    Peres, B
    Yoshida, S
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 779 - 782
  • [8] Noise spectroscopy of GaN/AlGaN HFETs
    Pavelka, Jan
    Tanuma, Nobuhisa
    Tacano, Munecazu
    Sikula, Josef
    WSEAS Transactions on Electronics, 2007, 4 (09): : 198 - 201
  • [9] Comparative study on AlGaN/GaN HFETs and MIS-HFETs
    Park, KY
    Cho, HI
    Choi, HC
    Lee, JH
    Bae, SB
    Bae, YH
    Lee, JL
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S898 - S901
  • [10] Contactless characterisation techniques for verification of (AlGaN/GaN) device heterostructures quality
    Paszkiewicz, R.
    Paszkiewicz, B.
    KozLowski, J.
    TLaczaLa, M.
    2001, SAGE Publications Ltd (08): : 3 - 4
12345