ACCURATE EXPRESSION FOR THE NOISE TEMPERATURE OF COMMON EMITTER MICROWAVE TRANSISTORS.

被引:0
|
作者
van der Ziel, Alder [1 ]
Bosman, G. [1 ]
机构
[1] Univ of Minnesota, Dep of Electrical, Engineering, Minneapolis, MN, USA, Univ of Minnesota, Dep of Electrical Engineering, Minneapolis, MN, USA
关键词
D O I
暂无
中图分类号
学科分类号
摘要
7
引用
收藏
页码:1280 / 1283
相关论文
共 50 条
  • [1] ACCURATE EXPRESSION FOR THE NOISE TEMPERATURE OF COMMON EMITTER MICROWAVE TRANSISTORS
    VANDERZIEL, A
    BOSMAN, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1280 - 1283
  • [2] NOISE PARAMETERS OF MICROWAVE TRANSISTORS.
    Vendelin, George D.
    Mueller, William C.
    Microwave journal, 1987, 30 (11): : 177 - 186
  • [3] CALCULATION OF THE EQUILIBRIUM TEMPERATURE DISTRIBUTIONS IN MULTIPLE-EMITTER MICROWAVE TRANSISTORS.
    Petrov, B.K.
    Kochetkov, A.I.
    Synorov, V.F.
    1738, (17):
  • [4] EFFECT OF TEMPERATURE ON NOISE PARAMETERS OF SHF TRANSISTORS.
    Ivanov, N.I.
    Yurchak, N.S.
    Instruments and experimental techniques New York, 1982, 25 (3 pt 2): : 650 - 652
  • [5] Impact of the Emitter Stored Charge on RF Noise of Junction Bipolar Transistors.
    Vitale, Francesco
    van der Toorn, Ramses
    2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2012,
  • [6] MICROWAVE STATIC INDUCTION TRANSISTORS.
    Shirahata, Kiyoshi
    Yukimoto, Yoshinori
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 220 - 240
  • [7] DOPOS TECHNOLOGY FOR MICROWAVE TRANSISTORS.
    Kamioka, Hajime
    Ishii, Kyoichi
    Takagi, Mikio
    1600, (08):
  • [8] Accurate temperature dependent noise models of microwave transistors based on neural networks
    Marinkovic, Zlatica
    Markovic, Vera
    GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 389 - 392
  • [9] EMITTER RESISTANCE OF ARSENIC- AND PHOSPHORUS-DOPED POLYSILICON EMITTER TRANSISTORS.
    Chor, E.F.
    Ashburn, P.
    Brunnschweiler, A.
    Electron device letters, 1985, EDL-6 (10): : 516 - 518
  • [10] Properties of Microwave Field Effect Transistors.
    Wiatr, Wojciech
    Elektronika, 1975, 16 (01): : 9 - 14