Electrical study of impurity states in conjugated polymers

被引：0

作者：

Stallinga, P. ^{[1
]}

Gomes, H.L. ^{[1
]}

Jones, G.W. ^{[2
]}

Taylor, D.M. ^{[2
]}

机构：

[1] UCEH, Universidade do Algarve, Campus de Gambelas, 8000 Faro, Portugal

[2] Inst. of Molecular and Biomol. Electronics, Univ. of Wales, Dean Street, Bangor, Gwynnedd, LL57 1UT, United Kingdom

来源：

Synthetic Metals | 1999年 / 101卷 / 01期

关键词：

Aluminum - Annealing - Current voltage characteristics - Electric contacts - Electric variables measurement - Electrodeposition - Hole traps - Interfaces (materials) - Schottky barrier diodes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Schottky diodes resulting from an intimate contact of aluminum on electro-deposited poly(3-methylthiopene), PMeT, have been studied by admittance spectroscopy, capacitance-voltage and current-voltage measurements, and optically-induced current transients. The loss-tangents show the existence of interface states that can be removed by vacuum annealing, also visible in the transients. Furthermore, the CV curves don't substantiate the idea of movement of the dopant ions.

引用

页码：496 / 497