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- [11] ORIGIN OF THE PHOTO-INDUCED CHANGES IN HYDROGENATED AMORPHOUS SILICON. Solar Cells: Their Science, Technology, Applications and Economics, 1982, 9 (1-2): : 133 - 148
- [12] PRELIMINARY STUDY ON THE ELECTRONIC STRUCTURE OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 133 - 141
- [13] OPTICAL INSTABILITIES AND LOCALIZED ELECTRONIC STATES IN HYDROGENATED AMORPHOUS SILICON. Solar Cells: Their Science, Technology, Applications and Economics, 1982, 9 (1-2): : 113 - 118
- [14] FLUCTUATION-INDUCED GAP STATES IN AMORPHOUS HYDROGENATED SILICON. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 53 (02): : 147 - 157
- [15] FREQUENCY DISPERSION IN THE CAPACITANCE OF A SCHOTTKY BARRIER ON AMORPHOUS HYDROGENATED SILICON. Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizik, 1984, 39 (06): : 69 - 72
- [18] CONDUCTANCE FLUCTUATIONS IN DOPED HYDROGENATED AMORPHOUS-SILICON PHYSICAL REVIEW B, 1993, 47 (19): : 12578 - 12589
- [20] MECHANISM OF THE HIGH-TEMPERATURE CONDUCTIVITY KINKS IN HYDROGENATED AMORPHOUS SILICON. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 53 (4 pt 2): : 293 - 300