ELECTRICAL AND GALVANOMAGNETIC PROPERTIES OF V3Si SINGLE CRYSTALS.

被引：0

作者：

Pan, V.M.

Prokhorov, V.G.

机构：

来源：

Soviet Journal of Low Temperature Physics (English Translation of Fizika Nizkikh Temperatur) | 1977年 / 3卷 / 04期

关键词：

CRYSTALS - Electric Conductivity - HALL EFFECT - Thermal Effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The present study is concerned with the temperature dependence of the electrical resistivity and of the Hall coefficient over the 17-300 degree K temperature range in the case of V//3Si single crystals of various degrees of purity. The results are analyzed on the basis of known theoretical models. Conclusions are drawn concerning an appreciable effect of lattice anharmonicity on the anomalous behavior of the electrical resistivity in these compounds.

引用

页码：226 / 230