Consistent structural properties of AlN, GaN, and InN

被引：0
|
作者：
Wright, A. F.
Nelson, J. S.
机构：
来源：
Pigment and Resin Technology | 1600年 / 24卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] CONSISTENT STRUCTURAL-PROPERTIES FOR ALN, GAN, AND INN
    WRIGHT, AF
    NELSON, JS
    PHYSICAL REVIEW B, 1995, 51 (12): : 7866 - 7869
  • [2] Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
    de Carvalho, Luiz Claudio
    Schleife, Andre
    Bechstedt, Friedhelm
    PHYSICAL REVIEW B, 2011, 84 (19)
  • [3] Ordering effects on the electronic structures of AlN/GaN, InN/GaN and InN/AlN superlattices
    Lakdja, A
    Bouhafs, B
    Ruterana, P
    COMPUTATIONAL MATERIALS SCIENCE, 2005, 33 (1-3) : 157 - 162
  • [4] Optical and Electronic Properties of AlN, GaN and InN: An Analysis
    Lamsal, Chiranjivi
    Chen, Dongguo
    Ravindra, Nuggehalli M.
    TMS 2012 141ST ANNUAL MEETING & EXHIBITION - SUPPLEMENTAL PROCEEDINGS, VOL 1: MATERIALS PROCESSING AND INTERFACES, 2012, : 701 - 713
  • [5] Electrical and optical properties of iron in GaN, AlN, and InN
    Wickramaratne, Darshana
    Shen, Jimmy-Xuan
    Dreyer, Cyrus E.
    Alkauskas, Audrius
    Van de Walle, Chris G.
    PHYSICAL REVIEW B, 2019, 99 (20)
  • [6] HYDROGENATION OF GAN, ALN, AND INN
    ZAVADA, JM
    WILSON, RG
    ABERNATHY, CR
    PEARTON, SJ
    APPLIED PHYSICS LETTERS, 1994, 64 (20) : 2724 - 2726
  • [7] First-principles calculations of the structural and electronic properties of AlN, GaN, InN, AlGaN and InGaN
    Beloufa, Abbes
    Bensaad, Zouaoui
    Soudini, Bel-Abbes
    Sekkal, Nadir
    Bensaad, Abdelallah
    Abid, Hamza
    INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS, 2009, 2 (01): : 11 - 22
  • [8] Structural and electronic properties of AlN, GaN and InN, and band offsets at AlN/GaN (10(1)over-bar-0) and (0001) interfaces
    Satta, A
    Fiorentini, V
    Bosin, A
    Meloni, F
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 515 - 520
  • [9] Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
    Lyons, J. L.
    Janotti, A.
    Van de Walle, C. G.
    PHYSICAL REVIEW B, 2014, 89 (03)
  • [10] Electron accumulation at InN/AlN and InN/GaN interfaces
    Veal, TD
    Piper, LFJ
    Mahboob, I
    Lu, H
    Schaff, WJ
    McConville, CF
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2246 - 2249
12345