INFLUENCE OF COMPOSITION OF PbSe1 - Sx SOLID SOLUTIONS ON THE POSITION AND WIDTH OF A THALLIUM IMPURITY BAND.

被引：0

|

作者：

Veis, A.N.

Kaidanov, V.I.

Nemov, S.A.

机构：

来源：

Soviet physics. Semiconductors | 1980年 / 14卷 / 06期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING LEAD COMPOUNDS

引用

收藏

页码：628 / 630

相关论文

共 50 条

[41] INFLUENCE OF THE 5D ELECTRONS OF MERCURY ON THE COLLAPSE OF THE BAND-GAP IN CDXHG1-XTE SOLID-SOLUTIONS
TEREKHOV, VA
KASHKAROV, VM
TETERIN, YA
RARENKO, IM
DOMASHEVSKAYA, EP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1038 - 1040
[42] DEPENDENCE OF THE BAND-GAP ON THE COMPOSITION OF PBS1-XSEX (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SOLID-SOLUTIONS
ZASAVITSKII, II
KURGANSKII, AV
MATSONASHVILI, BN
SHOTOV, AP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12): : 1324 - 1327
[43] GRADIENT ELUTION IN LIQUID-CHROMATOGRAPHY .1. INFLUENCE OF COMPOSITION OF MOBILE PHASE ON CAPACITY RATIO (RETENTION VOLUME, BAND WIDTH, AND RESOLUTION) IN ISOCRATIC ELUTION - THEORETICAL CONSIDERATIONS
JANDERA, P
CHURACEK, J
JOURNAL OF CHROMATOGRAPHY, 1974, 91 (APR24): : 207 - 221
[44] THE MN IMPURITY ENERGY-STATE AND ITS INFLUENCE ON THE KINETIC, OPTICAL AND MAGNETIC-PROPERTIES OF NARROW-GAP PB1-XSNXTE SOLID-SOLUTIONS
LASHKAREV, GV
RADCHENKO, MV
SIZOV, FF
SLYNKO, EI
TETYORKIN, VV
UKRAINSKII FIZICHESKII ZHURNAL, 1981, 26 (07): : 1173 - 1176
[45] DEPENDENCE OF THE ENERGY OF THE SPIN-ORBIT-SPLITTING DELTA-1 OF THE VALENCE BAND ON THE COMPOSITION OF (INSB)1-X(CDTE)X AND GE1-XSIX SOLID-SOLUTIONS
PETROV, AL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 339 - 339
[46] INFLUENCE OF LOCAL COMPOSITION FLUCTUATIONS IN SOLID-SOLUTIONS ON OPTICAL-PROPERTIES AND LUMINESCENCE OF BULK GAXIN1-XAS SINGLE-CRYSTALS
BURDUKOV, YM
ZOTOVA, NV
MAKHANBETALIEV, T
MELTSER, BY
NASLEDOV, DN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 321 - 324
[47] INFLUENCE OF STOICHIOMETRIC VACANCIES ON THE BEHAVIOR OF THE TOP OF THE VALENCE BAND OF (IN2TE3)X-(HGTE)1-X SOLID-SOLUTIONS
DOMASHEVSKAYA, EP
NEVRYUEVA, EN
GRUSHKA, GG
GOVALESHKO, NP
BAEV, AS
TEREKHOV, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 540 - 542
[48] COMPOSITION-DEPENDENT SHIFT OF THE BAND-GAP OF ZNSE1-XTEX (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) SOLID-SOLUTIONS
NAUMOV, AY
PERMOGOROV, SA
POPOVA, TB
REZNITSKII, AN
ZHULAI, VY
NOVOZHILOV, VA
SPENDIAROV, NN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02): : 213 - 214
[49] INFLUENCE OF UNIAXIAL DEFORMATION ON PHOTOLUMINESCENCE SPECTRA OF ALXGA1-X AS SOLID-SOLUTIONS OF COMPOSITIONS CORRESPONDING TO TRANSITION FROM DIRECT TO INDIRECT BAND-STRUCTURE
ALFEROV, ZI
NINUA, OA
TROFIM, VG
GARBUZOV, DZ
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1228 - &
[50] Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1-x)4 solid solutions
Levcenco, S.
Dumcenco, D.
Wang, Y. P.
Huang, Y. S.
Ho, C. H.
Arushanov, E.
Tezlevan, V.
Tiong, K. K.
OPTICAL MATERIALS, 2012, 34 (08) : 1362 - 1365

← 1 2 3 4 5 →