TANTALUM AND COBALT SILICIDES: TEMPERATURE SENSOR APPLICATIONS.

被引：0

作者：

Collins, R.A. ^{[1
]}

Johnston, D.F.C. ^{[1
]}

Dearnaley, G. ^{[1
]}

机构：

[1] Univ of Lancaster, Lancaster, Engl, Univ of Lancaster, Lancaster, Engl

来源：

Applied Physics A: Solids and Surfaces | 1986年 / A 40卷 / 02期

关键词：

COBALT SILICON ALLOYS - Thin Films - SENSORS - TEMPERATURE MEASUREMENT;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Ion bombardment induced mixing of Ta-Si films has been studied using 400 keV argon ions. Doses varied from 7 multiplied by 10**1**4 to 1 multiplied by 10**1**7 Ar** plus cm** minus **2 with post-bombardment anneals of 180-900 s at temperatures in the range 600-860 degree C using radiant heating. Silicide uniformity and stoichiometry were determined using alpha backscattering spectrometry. Optimum fabrication parameters were determined with regard to subsequent material sheet resistivity, temperature coefficient of resistance and application as a temperature sensing material. Similiar measurements were made on CoSi//2 layers prepared by annealing ion bombarded samples and comparison with silicide films arising from purely thermal annealing was made. (Edited author abstact)

引用

页码：109 / 117