EFFECT OF GAS PHASE GROWTH PARAMETERS ON THE COMPOSITION OF InGaAs IN THE HYDRIDE VPE PROCESS.

被引：0
|
作者：
Buckley, D.N. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Journal of Electronic Materials | 1988年 / 17卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING INDIUM COMPOUNDS
引用
收藏
页码：15 / 20
相关论文
共 50 条
  • [31] A SIMPLE METHOD FOR CALCULATION OF THE COMPOSITION OF VPE GROWN GAXIN1-XAS LAYERS AS A FUNCTION OF GROWTH-PARAMETERS
    JACOBS, K
    SIMON, I
    BUGGE, F
    BUTTER, E
    JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 155 - 160
  • [32] EFFECT OF CVD PROCESS PARAMETERS ON PHASE AND CHEMICAL-COMPOSITION OF BSCCO THIN-FILMS
    FUFLYIGIN, VN
    KAUL, AR
    POZIGUN, SA
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 361 - 366
  • [33] EFFECT OF HYDRAULIC EXTRUSION PROCESS PARAMETERS ON THE PHASE-COMPOSITION OF A NIOBIUM-TITANIUM ALLOY
    BURYAK, VP
    DUGADKO, AB
    MALYSHEV, EN
    PAVLOVSKAYA, EA
    STUKANOV, VV
    RUSSIAN METALLURGY, 1980, (04): : 151 - 155
  • [34] EFFECT OF TUYERE GAS COMPOSITION OF GAS FLOW PARAMETERS IN BLAST FURNACE
    KORSHIKO.GV
    RUSSIAN METALLURGY, 1965, (04): : 10 - &
  • [35] Effect of Welding Parameters and Gas Composition on PTAW Behaviour
    Yarmuch, M.
    Patchett, B. M.
    Ivey, D. G.
    Anderson, M.
    TRENDS IN WELDING RESEARCH, 2009, : 705 - +
  • [36] Liquid phase epitaxial growth process of InGaAs on InP with rare earth treatment
    Gao, W
    Berger, PR
    Hunsperger, RG
    Pamulapati, J
    Lareau, RT
    PHOTODETECTORS: MATERIALS AND DEVICES, 1996, 2685 : 171 - 177
  • [37] Modified physical vapor transport growth of SiC -: Control of gas phase composition for improved process conditions
    Wellmann, PJ
    Straubinger, TL
    Desperrier, P
    Müller, R
    Künecke, U
    Sakwe, SA
    Schmitt, H
    Winnacker, A
    Blanquet, E
    Dedulle, JM
    Pons, M
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 25 - 30
  • [38] PROCESS PARAMETERS, SUBSTRATE AND BIOMASS COMPOSITION IN THE GROWTH OF MUSHROOM MYCELIUM
    MARTIN, AM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1988, 195 : 69 - MBTD
  • [39] Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GraAs DWELL quantum
    Gutiérrez, M
    Hopkinson, M
    Liu, HY
    Herrera, M
    González, D
    García, R
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 151 - 155
  • [40] Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
    Tonkikh, AA
    Egorov, VA
    Polyakov, NK
    Tsyrlin, GÉ
    Volovik, BV
    Cherkashin, NA
    Ustinov, VM
    TECHNICAL PHYSICS LETTERS, 2002, 28 (03) : 191 - 193
12345