EFFECT OF GAS PHASE GROWTH PARAMETERS ON THE COMPOSITION OF InGaAs IN THE HYDRIDE VPE PROCESS.

被引：0
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作者：
Buckley, D.N. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Journal of Electronic Materials | 1988年 / 17卷 / 01期
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摘要：
SEMICONDUCTING INDIUM COMPOUNDS
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页码：15 / 20
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