Dynamic signal model in the surface channel charge coupled devices

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作者：
Electronic and Communication Laboratory , Ecole Mohammadia d'Ingenieurs, Rabat, Morocco [1 ]
机构：
来源：
Proc. Int. Conf. Microelectron. ICM | 1600年 / 145-148期
关键词：
Compendex;
D O I：
13th International Conference on Microelectronics, ICM 2001
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学科分类号：
摘要：
MOS devices - VLSI circuits
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