Dynamic signal model in the surface channel charge coupled devices

被引：0

作者：

Electronic and Communication Laboratory , Ecole Mohammadia d'Ingenieurs, Rabat, Morocco ^{[1
]}

机构：

来源：

Proc. Int. Conf. Microelectron. ICM | 1600年 / 145-148期

关键词：

Compendex;

D O I：

13th International Conference on Microelectronics, ICM 2001

中图分类号：

学科分类号：

摘要：

MOS devices - VLSI circuits

引用

共 50 条

[31] THE SURFACE-STATES AND THE TEMPERATURE EFFECT ON THE TRANSFER EFFICIENCY IN SURFACE-CHANNEL CHARGE-COUPLED-DEVICES
BOUHDADA, A
TOUHAMI, A
JOURNAL DE PHYSIQUE III, 1994, 4 (11): : 2303 - 2316
[32] A MODEL FOR CHARGE-TRANSFER IN BURIED-CHANNEL CHARGE-COUPLED-DEVICES AT LOW-TEMPERATURE
BANGHART, EK
LAVINE, JP
TRABKA, EA
NELSON, ET
BURKEY, BC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (05) : 1162 - 1174
[33] SIMPLE MODEL FOR CHARGE-COUPLED DEVICES
JAYADEVAIAH, TS
LAUR, J
ELECTRONICS LETTERS, 1971, 7 (25) : 751 - +
[34] CHARGE-COUPLED DEVICES AND RADAR SIGNAL PROCESSING.
Upton, Lee O.
Mayer, Gerard J.
RCA Engineer, 1975, 21 (01): : 30 - 34
[35] SIGNAL-PROCESSING APPLICATIONS OF CHARGE-COUPLED-DEVICES
MAVOR, J
RADIO AND ELECTRONIC ENGINEER, 1976, 46 (8-9): : 412 - 420
[36] CHARGE-DISTRIBUTION IN BURIED-CHANNEL CHARGE-COUPLED DEVICES
KENT, WH
BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (06): : 1009 - 1023
[37] CHARGE-COUPLED-DEVICES FOR ANALOG SIGNAL-PROCESSING
BUSS, DD
BRODERSEN, RW
HEWES, CR
PROCEEDINGS OF THE IEEE, 1976, 64 (05) : 801 - 804
[38] Noise analysis and measurements on buried channel charge coupled devices
Houng, K.C.
Chen, D.C.
Gong, J.
Lu, H.L.
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, 1992, 15 (03):
[39] UNIPHASE BURIED-CHANNEL CHARGE-COUPLED-DEVICES
BARSAN, RM
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (02) : 167 - 171
[40] SURFACE-CHANNEL CHARGE-TRANSFER DEVICES
BARSAN, RM
STUDII SI CERCETARI DE FIZICA, 1977, 29 (02): : 159 - 182

← 1 2 3 4 5 →