Dynamic signal model in the surface channel charge coupled devices

被引：0

作者：

Electronic and Communication Laboratory , Ecole Mohammadia d'Ingenieurs, Rabat, Morocco ^{[1
]}

机构：

来源：

Proc. Int. Conf. Microelectron. ICM | 1600年 / 145-148期

关键词：

Compendex;

D O I：

13th International Conference on Microelectronics, ICM 2001

中图分类号：

学科分类号：

摘要：

MOS devices - VLSI circuits

引用

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[1] Dynamic signal model in the surface channel charge coupled devices
Bri, S
Zenkouar, L
Yebari, M
ICM 2001: 13TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, 2001, : 145 - 148
[2] Numerical study of the dynamic signal in the surface channel charge coupled devices
Bri, S
Zenkouar, L
16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, 2004, : 585 - 588
[3] SIGNAL TRANSFER AND DEGRADATION IN SURFACE-CHANNEL CHARGE-COUPLED-DEVICES
BARSAN, RM
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1977, 124 (02): : 103 - 108
[4] INFLUENCE OF SIGNAL CHARGE ON FINAL DECAY CHARACTERISTICS OF SURFACE-CHANNEL CHARGE-COUPLED-DEVICES
ELSISSI, H
COBBOLD, RSC
SOLID-STATE ELECTRONICS, 1975, 18 (10) : 867 - 870
[5] MODEL FOR CHARGE TRANSPORT IN SURFACE CHANNEL DEVICES
SCOTT, DB
CHAMBERLAIN, SG
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) : 422 - 424
[6] SIGNAL PROCESSING USING CHARGE COUPLED DEVICES AND SURFACE WAVE DEVICES.
Whitehouse, H.J.
Means, R.W.
1973, : 572 - 577
[7] SCALING OF SURFACE-CHANNEL CHARGE-COUPLED-DEVICES
YAU, LD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (02) : 282 - 287
[8] SCALING OF SURFACE-CHANNEL CHARGE-COUPLED-DEVICES
YAU, LD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 214 - 219
[9] LARGE-SIGNAL THEORY OF SURFACE-CHARGE COUPLED DEVICES
CALZOLARI, PU
GRAFFI, S
ALTA FREQUENZA, 1979, 48 (10): : 590 - 603
[10] SIGNAL-PROCESSING USING CHARGE COUPLED DEVICES AND SURFACE-WAVE DEVICES
WHITEHOU.HJ
MEANS, RW
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1974, SU21 (01): : 65 - 65

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