Molecular beam epitaxial growth of GaAs on (631) oriented substrates

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作者：
Cruz-Hernandez, Esteban [1 ]
Pulzara-Mora, Alvaro [1 ,2 ]
Ramírez-Arenas, Francisco-Javier [3 ]
Rojas-Ramirez, Juan-Salvador [1 ]
Méndez-García, Víctor-Hugo [3 ]
López-López, Máximo [1 ]
机构：
[1] Physics Department, Centro de Investigación y de Estudios Avanzados, IPN, Apartado Postal 14-740, México D.F., 07000, Mexico
[2] Universidad Nacional de Colombia-Sede Manizales, A. A. 127, Colombia
[3] Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Lamas 4a Sección, Av. Karakorum 1470, C.P. 78210, San Luis Potosí, Mexico
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2005年 / 44卷 / 50-52期
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