Photoluminescence spectra of Zn1-xCdxSe/ZnSe and ZnSe/ZnSxSe1-x strained layer superlattices

被引：0

作者：

Shi, Xianghua ^{[1
]}

Ke, Lian ^{[1
]}

Jin, Caixia ^{[1
]}

Wei, Yanfeng ^{[1
]}

Ling, Zhen ^{[1
]}

Yu, Gencai ^{[1
]}

Wang, Jie ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1998年 / 19卷 / 11期

关键词：

Semiconducting selenium compounds - Semiconductor quantum wells - Superlattices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper presents photoluminescence spectra of Zn0.77Cd0.23Se/ZnSe and ZnSe/ZnS0.12/Se0.88 Strained-Layer Superlattices(SLS). The dominant broadening mechanisms of linewidth (FWHM) for free exciton emissions are analyzed. The contribution of alloy concentration fluctuation and well thickness fluctuation to linewidth are calculated. The theoretical results show that the predominant mechanisms of broadening at low temperature (4.4 K) are alloy concentration and well thickness fluctuation. Furthermore, it has demonstrated that the quality of ZnSe/ZnSxSe1-x is superior to that of Zn0.77Cd0.23Se/ZnSe.

引用

页码：818 / 823

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