Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: Substrate temperature and arsenic species effects

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作者：
Dagnall, G. [1 ]
Stock, S.R. [2 ]
Brown, A.S. [1 ]
机构：
[1] Sch. of Elec. and Comp. Engineering, Georgia Institute of Technology, 791 Atlantic Dr., Atlanta, GA 30332-0269, United States
[2] Sch. of Mat. Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, United States
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：242 / 247
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