Plasma and surface diagnostics during plasma-enhanced chemical vapor deposition of SiO2 from SiH4/O2/Ar discharges

被引：0
|
作者：
Han, Sang M. [1 ]
Aydil, Eray S. [1 ]
机构：
[1] Univ of California Santa Barbara, Santa Barbara, United States
来源：
Thin Solid Films | 1996年 / 290-291卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：427 / 434
相关论文
共 50 条
  • [41] Plasma diagnostics during plasma-enhanced chemical-vapor deposition of low-dielectric-constant SiOC(-H) films from TES/O2 precursors
    Navamathavan, R.
    Jung, An Soo
    Kim, Chang Young
    Choi, Chi Kyu
    Lee, Heon Ju
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (03) : 1468 - 1474
  • [42] Fast deposition of amorphous and microcrystalline silicon films from SiH2Cl2-SiH4-H2 by plasma-enhanced chemical vapor deposition
    Arai, Takeshi
    Nakamura, Takuya
    Shirai, Hajime
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (7 B): : 4907 - 4910
  • [43] Fast deposition of amorphous and microcrystalline silicon films from SiH2Cl2-SiH4-H-2 by plasma-enhanced chemical vapor deposition
    Arai, T
    Nakamura, T
    Shirai, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B): : 4907 - 4910
  • [44] A STUDY ON THE BEHAVIOR OF SIO2 FILM PRECURSORS WITH TRENCH DEPOSITION METHOD FOR SIH4/O2 LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    KAWAHARA, T
    YUUKI, A
    MATSUI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (03): : 431 - 436
  • [45] HIGH-FLUIDITY DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SI2H6 OR SIH4
    SHIN, H
    HASHIMOTO, M
    OKAMOTO, K
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6B): : 3081 - 3084
  • [46] SI/SIO2 INTERFACES FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2 ON PLASMA-PROCESSED SI SUBSTRATES
    MA, Y
    YASUDA, T
    HABERMEHL, S
    LUCOVSKY, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 781 - 787
  • [47] Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation
    Qu, Chenhui
    Sakiyama, Yukinori
    Agarwal, Pulkit
    Kushner, Mark J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (05):
  • [48] Effects of O2 plasma treatment on moisture barrier properties of SiO2 grown by plasma-enhanced atomic layer deposition
    Lee, Yujin
    Seo, Seunggi
    Oh, Il-Kwon
    Lee, Sanghun
    Kim, Hyungjun
    CERAMICS INTERNATIONAL, 2019, 45 (14) : 17662 - 17668
  • [49] Surface roughness of SiO2 from a remote microwave plasma enhanced chemical vapor deposition process
    Rack, MJ
    Vasileska, D
    Ferry, DK
    Sidorov, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2165 - 2170
  • [50] Chemical etch rate of plasma-enhanced chemical vapor deposited SiO2 films - Effect of deposition parameters
    Besser, RS
    Louris, PJ
    Musket, RG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) : 2859 - 2864
12345