共 50 条
- [34] Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane 1600, American Inst of Physics, Woodbury, NY, USA (76):
- [35] Growth of carbon nanowalls on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 2074 - 2076
- [36] Impurities in SiO2 films deposited by plasma-enhanced chemical vapor deposition using tetraethoxysilane Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), 1997, 121 (04): : 11 - 17
- [38] PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 USING NOVEL ALKOXYSILANE PRECURSORS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02): : 476 - 480
- [39] Residual stress analysis of SiO2 films deposited by plasma-enhanced chemical vapor deposition SURFACE & COATINGS TECHNOLOGY, 2000, 131 (1-3): : 153 - 157
- [40] PREPARATION AND PROPERTIES OF SIO2 FILMS DEPOSITED FROM SIH4 AND O2 TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (03): : 546 - &