LOW NOISE GaAs FET AMPLIFIERS.

被引：0
|
作者：
Fukuda, Sachiro
Ara, Youichi
Haga, Isao
机构：
来源：
NEC Research and Development | 1978年 / 48期
关键词：
TRANSISTORS; FIELD EFFECT - Applications;
D O I：
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中图分类号：
学科分类号：
摘要：
Microwave low noise amplifiers utilizing GaAs Schottky-barrier field effect transistors (GaAs FETs) contribute to performance improvement of recent microwave receivers. This paper describes characteristics of the GaAs FETs and the design considerations and the performance of various types of low noise GaAs FET amplifiers that have been developed in the several frequency bands within 1 to 12 GHz for use in line-of-sight microwave communication systems, over-the-horizon microwave communication systems and satellite communication earth stations.
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页码：67 / 78
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