Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

被引：0

作者：

Menna, R. ^{[1
]}

Shterengas, L. ^{[1
]}

Belenky, G. ^{[1
]}

Trussell, W. ^{[1
]}

Donetsky, D. ^{[1
]}

Maiorov, M. ^{[1
]}

Connolly, J. ^{[1
]}

Garbuzov, D. ^{[1
]}

机构：

[1] Sarnoff Corp, Princeton, United States

来源：

Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年

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页码：274 / 277

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