Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

被引：0

作者：

Menna, R. ^{[1
]}

Shterengas, L. ^{[1
]}

Belenky, G. ^{[1
]}

Trussell, W. ^{[1
]}

Donetsky, D. ^{[1
]}

Maiorov, M. ^{[1
]}

Connolly, J. ^{[1
]}

Garbuzov, D. ^{[1
]}

机构：

[1] Sarnoff Corp, Princeton, United States

来源：

Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：274 / 277

共 50 条

[21] 1.5-μm wavelength narrow stripe distributed reflector lasers for high-performance operation [J].

Kim, HC ;

Kanjo, H ;

Hasegawa, T ;

Tamura, S ;

Arai, S .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) :1146-1152

[22] The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers [J].

Al-Ghamdi, M. S. ;

Smowton, P. M. ;

Krysa, A. B. .

2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2012, :80-+

[23] High device yield and performance of InGaAsP MQW DFB lasers with absorptive grating [J].

Park, S. S. ;

Park, S. W. ;

Yu, J. S. .

ELECTRONICS LETTERS, 2007, 43 (20) :1095-1096

[24] Cryogenic performance of double-fused 1.5-μm vertical cavity lasers [J].

Zhang, YM ;

Piprek, J ;

Margalit, N ;

Anzlowar, M ;

Bowers, J .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (03) :503-508

[25] 1.5-μm InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response [J].

Hanyang Univ, Kyunki-do, Korea, Republic of .

IEEE J Sel Top Quantum Electron, 2 (516-522)

[26] Role of p-doping profile in InGaAsP multi-quantum well lasers: Comparison of simulation and experiment [J].

Hybertsen, MS ;

Alam, MA ;

Shtengel, GE ;

Belenky, GL ;

Reynolds, CL ;

Donetsky, DV ;

Smith, RK ;

Baraff, GA ;

Kazarinov, RF ;

Wynn, JD ;

Smith, LE .

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 :524-534

[27] HIGH-PERFORMANCE DFB-MQW LASERS AT 1.5 MU-M GROWN BY GSMBE [J].

PERALES, A ;

GOLDSTEIN, L ;

ACCARD, A ;

FERNIER, B ;

LEBLOND, F ;

GOURDAIN, C ;

BROSSON, P .

ELECTRONICS LETTERS, 1990, 26 (04) :236-238

[28] Short-term wavelength changes in 1.5-μm InGaAsP-InP distributed feedback semiconductor lasers [J].

Korea Univ, Seoul, Korea, Republic of .

IEEE Photonics Technol Lett, 8 (992-994)

[29] Effect of graded base p-doping on MIM performance [J].

Wernsman, B ;

Wehrer, RJ ;

Wilt, DM ;

Smith, RW ;

Siergiej, RR ;

Schmuck, GP ;

Ju, I ;

Geller, CB .

THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY, 2003, 653 :488-497

[30] The influence of p-doping on the temperature sensitivity of 1.3μm quantum dot lasers [J].

Massé, NF ;

Marko, IP ;

Sweeney, SJ ;

Adams, AR ;

Hatori, N ;

Sugarawa, M .

2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, :603-604

← 1 2 3 4 5 →