Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

被引：0
作者：
Menna, R. [1 ]
Shterengas, L. [1 ]
Belenky, G. [1 ]
Trussell, W. [1 ]
Donetsky, D. [1 ]
Maiorov, M. [1 ]
Connolly, J. [1 ]
Garbuzov, D. [1 ]
机构：
[1] Sarnoff Corp, Princeton, United States
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
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10
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页码：274 / 277
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