Mask blanks for extreme ultraviolet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers

被引:0
|
作者
Kearney, P.A.
Moore, C.E.
Tan, S.I.
Vernon, S.P.
Levesque, R.A.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy -: art. no. 053113
    Neuhäusler, U
    Oelsner, A
    Slieh, J
    Brzeska, M
    Wonisch, A
    Westerwalbesloh, T
    Brückl, H
    Schicketanz, M
    Weber, N
    Escher, M
    Merkel, M
    Schönhense, G
    Kleineberg, U
    Heinzmann, U
    APPLIED PHYSICS LETTERS, 2006, 88 (05) : 1 - 3
  • [42] Study of Ion Beam Sputtered Mo/Si mirrors for EUV lithography mask: influence of sputtering gas.
    Quesnel, E
    Teyssier, C
    Muffato, V
    Thibault, J
    ADVANCES IN OPTICAL THIN FILMS, 2003, 5250 : 88 - 98
  • [43] Ion beam assisted deposition of multi-layer X-ray mirrors for the extreme ultraviolet lithography
    Chassé, T
    Neumann, H
    Rauschenbach, B
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 377 - 381
  • [44] High-performance 6-inch EUV mask blanks produced under real production conditions by ion beam sputter deposition
    Becker, H
    Sobel, F
    Aschke, L
    Renno, M
    Krieger, J
    Buttgereit, U
    Hess, G
    Lenzen, F
    Knapp, K
    Yulin, T
    Feigl, T
    Kuhlmann, T
    Kaiser, N
    22ND ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2002, 4889 : 389 - 399
  • [45] Low energy Ar+ ion beam machining of Si thin layer deposited on a Zerodur® substrate for extreme ultraviolet lithography projection optics
    Iwata, T.
    Fujiwara, K.
    Pahlovy, S. A.
    Miyamoto, I.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (06): : 2894 - 2899
  • [46] The structural nature of SiO2/Ta2O5 multilayers on Si(100) formed by ion-beam sputter deposition
    Kojima, I
    Li, BQ
    Fujimoto, T
    Kim, KJ
    Moon, DW
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1997, 30 (15) : 2143 - 2146
  • [47] Low Energy Xe+ Ion Beam Machining of the Ultralow Expansion Glass Substrates for Aspherical Extreme Ultraviolet Lithography Projection Optics
    Endo, Hironori
    Yamada, Junya
    Pahlovy, Shahjada A.
    Miyamoto, Iwao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
  • [48] A DEEP LEVEL TRANSIENT SPECTROSCOPY COMPARISON OF ION-BEAM SPUTTER DEPOSITION DEFECTS IN HIGH AND LOW-TEMPERATURE ANNEALED N-SI SUBSTRATES
    AURET, FD
    BOJARCZUK, NA
    SCHNEIDER, CP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 853 - 856
  • [49] Reflectance measurements and optical constants in the extreme ultraviolet for thin films of ion-beam-deposited SIC, Mo, Mg2Si, and InSb and of evaporated Cr
    Larruquert, JI
    Keski-Kuha, RAM
    APPLIED OPTICS, 2000, 39 (16) : 2772 - 2781
  • [50] Reflectance measurements and optical constants in the extreme ultraviolet for thin films of ion-beam-deposited SiC, Mo, Mg2Si, and InSb and of evaporated Cr
    Larruquert, Juan I.
    Keski-Kuha, Ritva A.M.
    Applied Optics, 2000, 39 (16): : 2772 - 2781