Mask blanks for extreme ultraviolet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers

被引:0
|
作者
Kearney, P.A.
Moore, C.E.
Tan, S.I.
Vernon, S.P.
Levesque, R.A.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers
    Kearney, PA
    Moore, CE
    Tan, SI
    Vernon, SP
    Levesque, RA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2452 - 2454
  • [2] Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks
    Jindal, V.
    Kearney, P.
    Sohn, J.
    Harris-Jones, J.
    John, A.
    Godwin, M.
    Antohe, A.
    Teki, R.
    Ma, A.
    Goodwin, F.
    Weaver, A.
    Teora, P.
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY III, 2012, 8322
  • [3] Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks
    Kageyama, Junichi
    Yoshimoto, Mamoru
    Matsuda, Akifumi
    Jindal, Vibhu
    Kearney, Patrick
    Goodwin, Frank
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (04):
  • [4] Mo/Si multilayers for EUV lithography by ion beam sputter deposition
    Chassé, T
    Neumann, H
    Ocker, B
    Scherer, M
    Frank, W
    Frost, F
    Hirsch, D
    Schindler, A
    Wagner, G
    Lorenz, M
    Otto, G
    Zeuner, M
    Rauschenbach, B
    VACUUM, 2003, 71 (03) : 407 - 415
  • [5] Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography
    Randive, Rajul V.
    Ma, Andy
    Kearney, Patrick A.
    Krick, David
    Reiss, Ira
    Mirkarimi, Paul B.
    Spiller, Eberhard
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2006, 5 (02):
  • [6] Low-defect reflective mask blanks for Extreme Ultraviolet Lithography
    Burkhart, S
    Cerjan, C
    Kearney, P
    Mirkarimi, P
    Walton, C
    Ray-Chaudhuri, A
    EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 : 570 - 577
  • [7] Effect of interface treatment with assisted ion beam on Mo-Si multilayer formation for mask blanks for extreme ultraviolet lithography
    Hiruma, Kenji
    Miyagaki, Shinji
    Yamaguchi, Atsuko
    Nishiyama, Iwao
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (05): : 1554 - 1559
  • [8] Defect repair for extreme ultraviolet lithography (EUVL) mask blanks
    Hau-Riege, SP
    Barty, A
    Mirkarimi, PB
    Stearns, DG
    Chapman, H
    Sweeney, D
    Clift, M
    Gullikson, E
    Yi, MS
    EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 : 331 - 338
  • [9] Reduction of defect density on blanks:: application to the extreme ultraviolet lithography
    Hue, J
    Quesnel, E
    Muffato, V
    Pellé, C
    Granier, D
    Favier, S
    Besson, P
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 203 - 211
  • [10] Comparison of deposition techniques for Mo/Si reflective multilayers for EUV mask blanks
    Rook, Katrina
    Checco, Antonio
    Turner, Paul
    Kulkarni, Ashish A.
    Yamamoto, Kenji
    Lee, Meng H.
    INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2021, 2021, 11854