Very low contrast x-ray masks for high resolution printing
被引:0
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作者:
Chen, Y.
论文数: 0引用数: 0
h-index: 0
机构:
Lab de Microstructures et de, Microelectronique, Bagneux, FranceLab de Microstructures et de, Microelectronique, Bagneux, France
Chen, Y.
[1
]
Simon, G.
论文数: 0引用数: 0
h-index: 0
机构:
Lab de Microstructures et de, Microelectronique, Bagneux, FranceLab de Microstructures et de, Microelectronique, Bagneux, France
Simon, G.
[1
]
Haghiri-Gosnet, A.M.
论文数: 0引用数: 0
h-index: 0
机构:
Lab de Microstructures et de, Microelectronique, Bagneux, FranceLab de Microstructures et de, Microelectronique, Bagneux, France
Haghiri-Gosnet, A.M.
[1
]
Manin, L.
论文数: 0引用数: 0
h-index: 0
机构:
Lab de Microstructures et de, Microelectronique, Bagneux, FranceLab de Microstructures et de, Microelectronique, Bagneux, France
Manin, L.
[1
]
Launois, H.
论文数: 0引用数: 0
h-index: 0
机构:
Lab de Microstructures et de, Microelectronique, Bagneux, FranceLab de Microstructures et de, Microelectronique, Bagneux, France
Launois, H.
[1
]
机构:
[1] Lab de Microstructures et de, Microelectronique, Bagneux, France
来源:
Microelectronic Engineering
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1998年
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41-42卷
关键词:
Fabrication - Numerical analysis - Synchrotron radiation - X ray lithography;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
We propose a scheme for high resolution soft-contact printing with very low contrast X-ray masks. The scheme is based on the strongly enhanced image contrast due to absorber edge effects. In addition to a numerical analysis, we also investigate the mask fabrication with an absorber thickness of 0.15 μm (W) and the replication with synchrotron radiation of ultra high density features.