HIGH-FREQUENCY GAINAS/INP MULTIPLE QUANTUM WELL BURIED MESA ELECTROABSORPTION OPTICAL MODULATOR.

被引：0
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作者：
Miller, B.I. [1 ]
Koren, U. [1 ]
Tucker, R.S. [1 ]
Eisenstein, G. [1 ]
Bar-Joseph, I. [1 ]
Miller, D.A.B. [1 ]
Chemla, D.S. [1 ]
机构：
[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 11期
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