Determination of the arrhenius parameters for Si2H6 SiH4 + SiH2 and ΔH°(SiH2) by RRKM analysis of forward and reverse reaction rate data

被引：0
|
作者：
Moffat, Harry K.
Jensen, Klavs F.
Carr, Robert W.
机构：
来源：
Journal of Physical Chemistry | 1992年 / 96卷 / 19期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] DETERMINATION OF THE ARRHENIUS PARAMETERS FOR SI2H6 REVERSIBLE-ARROW SIH4 + SIH2 AND DELTA-H-CIRCLE-F(SIH2) BY RRKM ANALYSIS OF FORWARD AND REVERSE REACTION-RATE DATA
    MOFFAT, HK
    JENSEN, KF
    CARR, RW
    JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (19): : 7683 - 7695
  • [2] ESTIMATION OF THE ARRHENIUS PARAMETERS FOR SIH4 REVERSIBLE SIH2+H-2 AND DELTA-HFO (SIH2) BY A NONLINEAR-REGRESSION ANALYSIS OF THE FORWARD AND REVERSE REACTION-RATE DATA
    MOFFAT, HK
    JENSEN, KF
    CARR, RW
    JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (01): : 145 - 154
  • [3] RATE CONSTANTS FOR THE REACTIONS OF SIH AND SIH2 WITH SIH4 IN A LOW-PRESSURE SIH4 PLASMA
    NOMURA, H
    AKIMOTO, K
    KONO, A
    GOTO, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (09) : 1977 - 1982
  • [4] CONTRIBUTION OF D ORBITALS IN SIH SIH2, SIH3, AND SIH4
    HIGUCHI, J
    KUBOTA, S
    KUMAMOTO, T
    TOKUE, I
    BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1974, 47 (11) : 2775 - 2780
  • [5] AN ABINITIO STUDY OF THE INSERTION REACTION SIH2(1A1) + H-2-]SIH4
    SAX, A
    OLBRICH, G
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1985, 107 (17) : 4868 - 4874
  • [6] Measurement and calculation of SiH2 radical density in SiH4 and Si2H6 plasma for the deposition of hydrogenated amorphous silicon thin films
    Shirafuji, Tatsuru
    Tachibana, Kunihide
    Matsui, Yasuji
    1600, JJAP, Minato-ku, Japan (34):
  • [7] STATISTICAL AND NONSTATISTICAL EFFECTS IN BOND FISSION REACTIONS OF SIH2 AND SI2H6
    SCHRANZ, HW
    RAFF, LM
    THOMPSON, DL
    JOURNAL OF CHEMICAL PHYSICS, 1991, 94 (06): : 4219 - 4229
  • [8] REACTIONS OF SIH2(X1A1) WITH H-2, CH4, C2H4, SIH4 AND SI2H6 AT 298-K
    INOUE, G
    SUZUKI, M
    CHEMICAL PHYSICS LETTERS, 1985, 122 (04) : 361 - 364
  • [9] MEASUREMENT AND CALCULATION OF SIH2 RADICAL DENSITY IN SIH4 AND SI2H6 PLASMA FOR THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    SHIRAFUJI, T
    TACHIBANA, K
    MATSUI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 4239 - 4246
  • [10] DECOMPOSITION MECHANISMS OF SIH2, SIH3, AND SIH4 SPECIES ON SI(100)-(2X1)
    GATES, SM
    GREENLIEF, CM
    BEACH, DB
    JOURNAL OF CHEMICAL PHYSICS, 1990, 93 (10): : 7493 - 7503
12345