Photoexcitation of electron-hole pairs during SIMS

被引：0
作者：
Kempf, J. [1 ]
Nonnenmacher, M. [1 ]
Wagner, H.H. [1 ]
机构：
[1] IBM Heidelberg, Germany
来源：
Applied Physics A: Solids and Surfaces | 1989年 / 49卷 / 03期
关键词：
15;
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摘要：
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页码：279 / 283
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