Photoexcitation of electron-hole pairs during SIMS

被引：0

作者：

Kempf, J. ^{[1
]}

Nonnenmacher, M. ^{[1
]}

Wagner, H.H. ^{[1
]}

机构：

[1] IBM Heidelberg, Germany

来源：

Applied Physics A: Solids and Surfaces | 1989年 / 49卷 / 03期

关键词：

15;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：279 / 283

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