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INVESTIGATION OF DISLOCATIONS IN SILICON BY THE ESR METHOD.
被引：0
作者：
Kveder, V.V.
Osip'yan, Yu.A.
机构：
来源：
Soviet physics. Semiconductors
|
1982年
/
16卷
/
11期
关键词：
MAGNETIC RESONANCE - PHONONS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that plastic deformation creates paramagnetic centers which can be attributed unambiguously to chains of dangling dislocation bonds. A structural transition clearly occurs in such chains below 50 degree K. The available data demonstrate the existence of one-dimensional phonons localized at dislocations.
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页码：1246 / 1248
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