HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS SUBJECTED TO QUANTIZING MAGNETIC FIELDS.

The results are given of theoretical and experimental studies of hot electrons in n-type Ge subjected to a longitudinal quantizing magnetic field. The distribution function is found for carriers subject to allowance for the quasielastic anisotropic scattering by acoustic phonons described by the deformation potential and for the classical scattering by intravalley optical and intervalley phonons. The field dependences of the mobility and the current-voltage characteristics are calculated and compared with the experimental results. It is shown that in a longitudinal quantizing magnetic field the anisotropy of the scattering of hot electrons on acoustic phonons governs essentially their behavior.