High-temperature scanning tunneling microscopy observation of a (15, 17, 1) facet structure on a Si(110) surface

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作者：

机构：

[1] Yamamoto, Youiti

[2] Sueyoshi, Takashi

[3] Sato, Tomoshige

[4] Iwatsuki, Masashi

来源：

Yamamoto, Youiti | 1808年 / 32期

关键词：

Crystal structure - Electron tunneling - High temperature effects - Scanning electron microscopy - Surface properties;

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摘要：

High-temperature scanning tunneling microscopy (HTSTM) was applied to observe a facet structure on a Si(110) surface. The facet structures of (15, 17, 1) and (17, 15, 1) and the 16-structure were observed at 655°C. The 16-structure was formed on flat parts. It was confirmed that the 16-structure and the facet structures of (15, 17, 1) and (17, 15, 1) coexisted on the surface on which hillocks are dispersed. The hillock may be a contamination.

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