SILICON-GOLD PAIR IN SILICON INVESTIGATED BY EPR.

被引：0

作者：

Hoehne, M. ^{[1
]}

机构：

[1] Akad der Wissenschaftern der DDR, Berlin, East Ger, Akad der Wissenschaftern der DDR, Berlin, East Ger

来源：

Physica Status Solidi (B) Basic Research | 1986年 / 138卷 / 01期

关键词：

GOLD AND ALLOYS - INFRARED RADIATION - MAGNETIC RESONANCE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this center, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized at a silicon atom and a gold atom, both forming a trigonal pair. The interaction with six groups of three equivalent silicon ligands is partly resolved. The g-values are compared with those of other gold-related defects in silicon. Models are discussed.

引用

页码：337 / 346