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- [1] THE ANGULAR-DEPENDENCE OF ENERGY-LOSS OF CHANNELED 2 MEV HELIUM-IONS ALONG SI(100) AXIS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3): : 76 - 80
- [2] Angular dependent energy loss of 0.8-2.0 MeV He ions channeled along the Si⟨100⟩ direction NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 : 132 - 136
- [3] Angular dependence for the energy loss of channeled He ions near the Si⟨110⟩ and ⟨111⟩ directions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 174 (04): : 407 - 413
- [4] Angular dependent energy loss of 0.8-2.0 MeV He ions channeled along the Si〈1 0 0〉 direction Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 136-138 : 132 - 136
- [5] Angular dependence of the electronic energy loss of 800-keV He ions along the Si[100] direction PHYSICAL REVIEW B, 1997, 55 (07): : 4332 - 4342
- [7] CORRELATION BETWEEN ENERGY-LOSS AND ION-INDUCED ELECTRON-EMISSION OF 1-MEV PROTONS CHANNELED ALONG THE [100] AXIS OF A THIN SILICON CRYSTAL NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4): : 30 - 34