1-7 GHz monolithic integrated low noise amplifier

被引：0

作者：

Peng, Longxin ^{[1
,2
]}

Jiang, Youquan ^{[2
]}

Lin, Jinting ^{[2
]}

Wei, Tongli ^{[1
]}

机构：

[1] Microelectronic Ctr., Southeast Univ., Nanjing 210096, China

[2] Nanjing Electron. Devices Inst., Nanjing 210016, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2003年 / 23卷 / 03期

关键词：

Acoustic noise - Feedback amplifiers - High electron mobility transistors - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A microwave monolithic fully integrated broadband low noise feedback amplifier with high performances is developed and fabricated on 3 GaAs wafers successfully. The two-stage amplifier is characterized by high stability, broadband, low noise, high gain with good gain flatness. It can be directly driven by +5 V single power supply without any off-chip bias circuitry and DC blocked by input and output MIM capacitors, so it is very easily used. The LNA is fabricated by 0.5 μm gate length GaAs processes. All active and passive components in the circuit, including bias circuitry, are integrated on 3.0×2.0 mm2 GaAs substrate chip. From frequency 1.0 GHz to 7.0 GHz, the LNA achieved a power gain of 20 dB with a good flatness of only ±0.75 dB, a maximum noise figure of 2.5 dB, input and output VSWRs of about 2.0 and the output P1dB power of 14 dBm. The design principal and processes are described. The measured results are in good agreement with the design. Finally, it is worth indicating that the yield of LNA chip is high.

引用

页码：296 / 300