Emissivity and structure in disordered PbO-SiO2 matrices

被引:0
作者
Shchapova, Yu.V. [1 ]
Zatsepin, A.F. [1 ]
机构
[1] Kirov Ural Polytechnical Inst, Russia
来源
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series | 1988年 / 52卷 / 08期
关键词
Electrons--Emission - Lead Compounds - Silica - Thermoluminescence;
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摘要
PbO-SiO2 glasses containing from 35 to 65 mol % PbO have been used in comparing the concentration-dependence curves for bulk structure-sensitive properties. We used the xPbO-(1 - x)SiO2 glass series for x = 0.35-0.65, which were made from chemically pure SiO2 and PbO; the thermostimulated exoelectron emission curves were recorded with a research system, where we used polished surfaces for specimens made as 8.0 × 8.0 × 0.8 mm wafers. An oil-free vacuum of 10-4 Pa was used and the specimens were heated at 20 deg/min; the thermoluminescence curves were recorded at the same time. The specimens had been irradiated with $CHi or γ rays to doses of 106-107 R in air. The carrier-trapping centers produced by the irradiation were identified by ESR. The structures were deduced from the structure-sensitive characteristics: density, hardness, and thermal-expansion coefficient.
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页码:138 / 141
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