HOPPING CONDUCTION IN AN ARBITRARY MAGNETIC FIELD.

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作者：
Ioselevich, A.S.
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Soviet physics. Semiconductors | 1981年 / 15卷 / 12期
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摘要：
The exponential dependence of the hopping conductivity on an arbitrary magnetic field is calculated. The method employed is based on the fact that the exponent in the overlap integral is equal to the below-barrier action, on the below-barrier classical electron path between adjacent donors in the magnetic field. The magnetic field dependence of the electron state energy at the donor is taken into account. The results of experiments on n-type gallium arsenide and indium phosphide are discussed.
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页码：1378 / 1381
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