EFFECT OF THE CRYSTAL QUALITY OF THE SUBSTRATE ON LUMINESCENT PROPERTIES OF GaAs:Si AND GaAs:Ge LIQUID PHASE EPITAXIAL LAYERS.

Photo- and cathodoluminescence measurements were used for the estimation of the quality of homoepitaxial layers grown on GaAs substrates. Considerable interest was paid to the influence of substrate quality on the properties of deposited epitaxial layer. Direct correlation between the dislocation density in the substrate and the luminescence output from the layer surface has been established. Additionally, it was revealed that the variations in the luminescence quality along the growth direction in the vicinity of the substrate/layer interface are caused by hole-impurity complexes contamination.