Comparison of NiCr-O and Cr-Si thin film resistors with mid-range of electric resistance

被引：0

作者：

Dong, X.P. ^{[1
]}

Wu, J.S. ^{[1
]}

Mao, D.L. ^{[1
]}

Mao, L.Z. ^{[1
]}

机构：

[1] Shanghai Jiaotong Univ., Shanghai 200030, China

来源：

Shanghai Jiaotong Daxue Xuebao/Journal of Shanghai Jiaotong University | 2000年 / 34卷 / 12期

关键词：

Electric resistance films - Resistive film applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Alloy composition, depositing conditions and annealing procedures are important factors affecting thin-film properties. In order to select suitable materials for resistive films, microstructures of NiCr-O and Cr-Si sputtered films used for the mid-range of resistance were analyzed. Electrical properties of the films before and after annealing were compared. The possibility of degradation was examined by short-time test. The results show that, after annealing, microstructure of Cr-Si sputtered film is nanometers' chromium silicides embedded in amorphous matrix and SiOx, while NiCr-O sputtered film is a mixture of Cr2O3 and atomic short-range order metallic phases. Cr-Si resistive film is tighter and more stable than NiCr-O resistive film, and the former has the advantageous electrical properties to resist puncture voltage and damp.

引用

页码：1610 / 1614