Study of sulphur diffusion in ZnMgSSe/ZnSe quantum wells by energy-loss imaging in a transmission electron microscope

被引：0

作者：

Walther, T. ^{[1
]}

Kalisch, H. ^{[2
]}

Heime, K. ^{[2
]}

Heuken, M. ^{[2
,3
]}

Marko, I. ^{[4
]}

Yablonskii, G.P. ^{[4
]}

机构：

[1] Inst. für Anorganische Chemie, Universität Bonn, Römerstr. 164, D-53117 Bonn, Germany

[2] Institut für Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen, Germany

[3] AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany

[4] Institute of Physics, Natl. Academy of Sciences of Belarus, 68 F. Scaryna Ave., Minsk 220072, Belarus

来源：

| 2000年 / Wiley-VCH Verlag Berlin GmbH, Weinheim, Germany卷 / 180期

关键词：

Annealing - Diffusion - Energy dissipation - High resolution electron microscopy - Metallorganic vapor phase epitaxy - Numerical methods - Photoluminescence - Semiconducting zinc compounds - Sulfur - Temperature - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The technique of spectrum imaging in a transmission electron microscope with energy filter and two-dimensional detector is applied to a ZnMgSSe/ZnSe multiple quantum well laser structure. Quantitative S profiles are extracted from this quaternary system with an accuracy better than 1 at% at a spatial resolution of 1 nm. From a comparison of as-grown and annealed structures the diffusivity is calculated to 6 × 10-22 m2s-1 at a temperature of 277°C.

引用

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