Liquid-Phase Epitaxy of High-Purity GaP Layers and their Investigation.

For the liquid-phase epitaxy of GaP the epitaxial layers are heavily doped with Si resulting from the reduction of silica, as the main constituent in the hot zone of the epitaxial reactor, by the carrier gas H//2. The stepwise elimination of the quartz in the reactor reduces the net donor density from 2 multiplied by (times) 10**1**7 cm** minus **3 to 3 multiplied by (times) 10**1**5 cm** minus **3. The residual donors were positively identified as S, while the residual acceptors are thought to be carbon.