Electronic structure and characteristic of Co chemisorption on Si(100) surface

被引：0

作者：

Wei, Shuyi ^{[1
]}

Ma, Li ^{[1
]}

Yang, Zongxian ^{[1
]}

Dai, Xianqi ^{[1
]}

Zhang, Kaiming ^{[2
]}

机构：

[1] Coll. of Phys. and Info. Eng., He'nan Normal Univ., Xinxiang 453002, China

[2] Appl. Surface Phys. Lab., Fudan Univ., Shanghai 200433, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2003年 / 24卷 / 10期

关键词：

Chemisorption - Cobalt - Electronic structure - Metallic films - Silicon wafers - Surface chemistry;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The adsorption of one monolayer Co atoms on an ideal Si(100) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. Energies of adsorption systems of a Co atom on different sites are calculated. It is found that the adsorbed Co atoms are more favorable on C site (four-fold site) than on any other sites on Si(100) surface and a mixed layer of Co might exist at Co/Si(100) interface. The charge transfer and the layer projected density of states are also studied.

引用

页码：1040 / 1043