Domain structure of epitaxial PbTiO3 thin films on Pt(001)/MgO(001) substrates

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机构：
[1] Kim, Y.K.
[2] Lee, K.
[3] Baik, S.
来源：
Baik, S. (sgbaik@postech.edu) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
Computer simulation - Crystal structure - Dislocations (crystals) - Epitaxial growth - Ferroelectricity - Finite element method - Magnesia - Phase transitions - Platinum - Relaxation processes - Tensile stress - Thickness measurement;
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摘要：
The ferroelectric domain structures and their evolution in epitaxially grown PbTiO3 films with various thickness on Pt(001)/MgO(001) substrates were investigated. It was found that the dependence of the domain formation on the ferroelectrics film thickness was related to the degree of the misfit strain relaxation at the initial growth stage. The relaxation of the compressive misfit stress was enhanced as the film thickness increases, which in turn reduces the residual compressive misfit stress at TG.
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