Current effects on Si(111) surfaces at the phase transition between the 7×7 and the 1×1 structures

被引：0

作者：

Yamaguchi, Hiroi ^{[1
]}

Yagi, Katsumichi ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Tokyo, Japan

来源：

Surface Science | 1993年 / 287-88卷 / pt B期

关键词：

Crystal defects - Crystal orientation - Crystal structure - Electric currents - Microscopic examination - Phase transitions - Surfaces;

D O I：

10.1016/0039-6028(93)91080-9

中图分类号：

学科分类号：

摘要：

It has been known that surface step structures of clean Si surfaces depend on the direction of the DC current fed through the crystals. In the present paper the current effects at the phase transition between the 7×7 and the 1×1 structures were studied in detail by reflection electron microscopy. We found that the current effect depended on the coverage of the 7×7 structure on each terrace during the phase transition and reversed three times.

引用

页码：820 / 825