Mathematical modeling of grown-in defects formation in Czochralski silicon

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作者：

Sumitomo Metal Industries Ltd, Amagasaki, Japan ^{[1
]}

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来源：

J Cryst Growth | / 3-4卷 / 334-342期

关键词：

Crystal defects - Crystal growth from melt - Mathematical models - Nucleation - Oxygen - Precipitation (chemical) - Semiconductor growth;

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摘要：

On the basis of a mathematical model proposed previously, oxygen precipitation in growing Czochralski (CZ) crystals is analyzed, and the calculated results are compared with experimental data of grown-in defects observed with laser scattering tomography (LST). The behavior of oxygen precipitates is qualitatively very similar to that of grown-in defects, but there are quantitative discrepancies between the calculation and the observation. The formation process of grown-in defects is discussed.

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