Mathematical modeling of grown-in defects formation in Czochralski silicon

被引：0
|
作者：
Sumitomo Metal Industries Ltd, Amagasaki, Japan [1 ]
机构：
来源：
J Cryst Growth | / 3-4卷 / 334-342期
关键词：
Crystal defects - Crystal growth from melt - Mathematical models - Nucleation - Oxygen - Precipitation (chemical) - Semiconductor growth;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
On the basis of a mathematical model proposed previously, oxygen precipitation in growing Czochralski (CZ) crystals is analyzed, and the calculated results are compared with experimental data of grown-in defects observed with laser scattering tomography (LST). The behavior of oxygen precipitates is qualitatively very similar to that of grown-in defects, but there are quantitative discrepancies between the calculation and the observation. The formation process of grown-in defects is discussed.
引用
收藏
相关论文
共 50 条
  • [1] Mathematical modeling of grown-in defects formation in Czochralski silicon
    Kobayashi, S
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) : 334 - 342
  • [2] Formation process of grown-in defects in Czochralski grown silicon crystals
    Nakamura, K
    Saishoji, T
    Kubota, T
    Iida, T
    Shimanuki, Y
    Kotooka, T
    Tomioka, J
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (01) : 61 - 72
  • [3] Formation process of grown-in defects in Czochralski grown silicon crystals
    Komatsu Electronic Metals Co Ltd, Kanagawa, Japan
    J Cryst Growth, 1 (61-72):
  • [4] Formation of grown-in defects during Czochralski silicon crystal growth
    Nishikawa, Hideshi
    Tanaka, Tadami
    Yanase, Yoshio
    Hourai, Masataka
    Sano, Masakazu
    Tsuya, Hideki
    1997, JJAP, Tokyo, Japan (36):
  • [5] Formation of microscopic distribution of grown-in defects in Czochralski silicon crystal
    Habu, R
    Kawakami, K
    Hasebe, M
    SOLID STATE PHENOMENA, 1997, 57-8 : 27 - 35
  • [6] Formation of grown-in defects during Czochralski silicon crystal growth
    Nishikawa, H
    Tanaka, T
    Yanase, Y
    Hourai, M
    Sano, M
    Tsuya, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6595 - 6600
  • [7] Control of grown-in defects in Czochralski silicon crystals
    Hourai, M
    Kelly, GP
    Tanaka, T
    Umeno, S
    Ogushi, S
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 372 - 385
  • [8] Formation behavior of grown-in defects in silicon during Czochralski crystal growth
    Saishoji, T
    Nakamura, K
    Nakajima, H
    Yokoyama, T
    Ishikawa, F
    Tomioka, J
    HIGH PURITY SILICON V, 1998, 98 (13): : 28 - 40
  • [9] Relationship between grown-in defects in Czochralski silicon crystals
    Umeno, Shigeru
    Okui, Masahiko
    Hourai, Masataka
    Sano, Masakazu
    Tsuya, Hideki
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (5 B):
  • [10] Relationship between grown-in defects in Czochralski silicon crystals
    Umeno, S
    Okui, M
    Hourai, M
    Sano, M
    Tsuya, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (5B): : L591 - L594
12345