GaN layer growth in relation to buffer deposition temperature

被引：0
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作者：
Demangeot, F. [1 ]
Renucci, M.A. [1 ]
Frandon, J. [1 ]
Briot, O. [1 ]
机构：
[1] Universite Paul Sabatier, Toulouse, France
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1997年 / B43卷 / 1-3期
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摘要：
6
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页码：246 / 249
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