Hot-carrier effects in depletion-mode MOSFETs

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机构：
[1] Ong, T.C.
[2] Ko, P.K.
[3] Hu, C.
来源：
Ong, T.C. | 1600年 / 32期
关键词：
Depletion-Mode MOSFETs - Enhancement-Mode MOSFET - Hole Injection - Hot-Carrier Effects;
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摘要：
(Edited Abstract)
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