EFFECT OF RECOILED OXYGEN ON THE ANNEALING PROPERTIES OF Si SURFACE LAYER IMPLANTED WITH As THROUGH SiO2 FILMS.

被引：0
|
作者：
Izumi, T. [1 ]
Suzuki, A. [1 ]
Matsumori, T. [1 ]
Hirao, T. [1 ]
Fuse, G. [1 ]
机构：
[1] Tokai Univ, Dep of Electronics,, Hiratsuka, Jpn, Tokai Univ, Dep of Electronics, Hiratsuka, Jpn
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1985年 / B7-8卷 / pt 1期
关键词：
HEAT TREATMENT - Annealing;
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学科分类号：
摘要：
The isothermal annealing behavior and the depth profiles of amorphous and oxygen associated centers, which are formed in Si substrates after through-oxide implantation, have been investigated using electron spin resonance (ESR). The results suggest that the amorphous center combines with recoiled oxygen in the nearest neighbors to create a paramagnetic center, such as a SiO//3/////2 structure after a short annealing time at a low temperature.
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页码：321 / 325
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