Optimized InAs quantum effect device structures grown by molecular beam epitaxy

被引：0

作者：

Yoh, Kanji ^{[1
]}

Takeuchi, Hayato ^{[1
]}

Nishida, Akira ^{[1
]}

Inoue, Masataka ^{[1
]}

机构：

[1] Hokkaido Univ, Sapporo, Japan

来源：

Journal of Crystal Growth | 1995年 / 150卷 / 1 -4 pt 1期

关键词：

The authors are grateful to J. Konda; T. Naka-gawa and H. Fujikura of the Hokkaido University for the technical assistance in sample preparation and measurements. This work was partially supported by a Grant-in-Aid for Scientific Research from The Ministry of Education; Science and Culture;

D O I：

10.1016/0022-0248(95)80236-6

中图分类号：

学科分类号：

摘要：

引用

页码：364 / 369