A new AIGaAs/GaAs/InGaAs lasing switch grown by MBE

被引：0

作者：

Lee, Ming Rong ^{[1
]}

Yarn, K.F. ^{[1
]}

Chang, W.R. ^{[1
]}

机构：

[1] Far East College, Department of Electrical Engineering, Optoeiectronic Semiconductor Center, P. O. Box 345, Tainan 704, Taiwan

来源：

Active and Passive Electronic Components | 2001年 / 24卷 / 04期

关键词：

Semiconductor quantum wells;

D O I：

暂无

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学科分类号：

摘要：

A quantum well optoelectronic switch (QWOES) based on regenerative loop ofpotential barrier lowering resulted from the forward biased pn junction is demonstrated in a A1GaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(=Vs/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 k Ω, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm. © 2001 OPA (Overseas Pubtishers Auociaflon) N.V.

引用

页码：231 / 236